The advantages of using SiC in power electronics is the focus of a large number of semiconductor news studies and reports. These reports prove just how advantages using SiC can be when designing power electronics.
Although silicon offers numerous benefits and advantages in power MOSFETs, it also displays some limitations that are characteristic to silicon material properties. Properties like low thermal conductivity, low bandgap energy, and limitations in switching frequencies. Power semiconductor devices, however, that are made with silicon carbide (SiC), don’t possess those types of material limitations.