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Diodes, Transistors and Thyristors

Fairchild Launches SuperFET III MOSFET Family with Best-in-Class Efficiency and Reliability

Better Efficiency, EMI and Ruggedness Make SuperFET III MOSFETs Ideal for High-Performance Products with Demanding Robustness and Reliability Requirements

Fairchild Semiconductor, now part of ON Semiconductor), today introduced its SuperFET® III family of 650V N-channel MOSFETs, the company’s new generation of MOSFETs that meet the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products.

The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent efficiency and superior thermal performance to make it an ideal choice for high-performance applications. Complementing its performance characteristics, its broad range of package options gives product designers greater flexibility, particularly with size constrained designs.

New 1700V SiC MOSFET and Control IC Evaluation Board from ROHM Semiconductor

ROHM Semiconductor has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.

In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and manufacturing equipment. In the majority of auxiliary power supplies, which are used to provide drive voltages for power supply circuits, control ICs, and various supplementary systems, high breakdown (1000V+) silicon MOSFETs are normally utilized. However, these high-voltage MOSFETs suffer from large conduction loss (often leading to excessive heat generation), and present problems related to mounting area and the number of external components, making it difficult to reduce system size. In response, ROHM developed low-loss SiC MOSFETs and control ICs that maximize performance while contributing to end-product miniaturization.

New synchronous rectification ICs for simplicity and efficiency in SMPS applications

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) released the IR1161L and IR11688S secondary synchronous rectification (SSR) family of Controller ICs to complete Infineon’s product offerings for SMPS applications.

The IR1161L and IR11688S SSR ICs meet the new 2016 standards set by the U.S. Department of Energy and the “European Code of Conduct for Energy Efficiency in Data Centre” which demand a 1 to 3 percent efficiency improvement over previous requirements. Taking 2 percent saving as an average for new adapters, US adult notebook users alone can save 525 GWh per year – which is enough to power New York City for at least 40 days.

Super Barrier Rectifier from Diodes Incorporated Optimized for Solid-State Retrofit MR16 LED Lamps

Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets, today introduced the SBRT3M40P1. This Trench Super Barrier Rectifier (SBR®) has been optimized to deliver a low forward-voltage drop in a small form factor while maintaining low reverse-current leakage. This capability addresses requirements for input bridge rectifiers in solid-state lighting (SSL) applications focused on 12V AC LED retrofit lamps, which provide a more efficient and longer life alternative to popular MR16 halogen bulbs.

New 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E E Series MOSFETs in PowerPAK® SO-8L Increase Reliability and Reduce Package Inductance

Vishay Intertechnology announces that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Vishay Siliconix 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E increase reliability and provide reduced package inductance for lighting, industrial, telecom, computing, and consumer applications.

Advantages of Using Silicon Carbide in Power Electronics

The advantages of using SiC in power electronics is the focus of a large number of semiconductor news studies and reports.  These reports prove just how advantages using SiC can be when designing power electronics.

Although silicon offers numerous benefits and advantages in power MOSFETs, it also displays some limitations that are characteristic to silicon material properties.  Properties like low thermal conductivity, low bandgap energy, and limitations in switching frequencies.  Power semiconductor devices, however, that are made with silicon carbide (SiC), don’t possess those types of material limitations. 

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