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New 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E E Series MOSFETs in PowerPAK® SO-8L Increase Reliability and Reduce Package Inductance

Vishay Intertechnology announces that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Vishay Siliconix 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E increase reliability and provide reduced package inductance for lighting, industrial, telecom, computing, and consumer applications.
• Offered in space-saving, surface-mount PowerPAK SO-8L package designed and developed by Vishay Siliconix
• Compact 5 mm by 6 mm footprint
• Increase reliability compared to MOSFETs in leadless DFN packages
• Low on-resistance and gate charge reduce conduction and switching losses to save energy
• Withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing
• Fully RoHS compliant with Halogen free green mold compound
 
Applications:

Power factor correction, flyback and two-switch forward converters, and hard-switched topologies for HID and LED lighting, and industrial, telecom, consumer, and computing power adaptors

Availability:
 
Samples and production quantities of the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E MOSFETs are available now, with lead times of 16 weeks. To access the product datasheets on the Vishay Website, go to:
 
http://www.vishay.com/ppg?91563 (SiHJ8N60E)
http://www.vishay.com/ppg?91589 (SiHJ6N65E)
http://www.vishay.com/ppg?91823 (SiHJ7N65E)
 
(2 votes)
New 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E E Series MOSFETs in PowerPAK® SO-8L Increase Reliability and Reduce Package Inductance - 5.0 out of 5 based on 2 votes